Method of fabricating semiconductor device having blocking layer and fuse

ABSTRACT

The semiconductor device comprises: an insulation film  72  having a contact hole  74  which reaches a substrate  10  formed in; an interconnection layer  78  connected to the substrate  10  through the contact hole  74 ; a blocking layer  80  formed of the same conducting layer as the interconnection layer  78 ; an insulation film  82  formed on the insulation film  72 ; and fuses  88  formed on the insulation film  82  in a region where the blocking layer formed. This structure of the semiconductor device makes it possible that the blocking layer  80  for restraining the laser ablation to be formed without complicating the conventional semiconductor device fabrication steps.

This is a division of application Ser. No. 09/256,081, filed Feb. 24,1999, now U.S. Pat. No. 6,333,545.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device including a fusecircuit which can be disconnected by laser ablation and a method forfabricating the semiconductor device.

Semiconductor devices, such as memory devices of DRAMs, SRAMs, etc.,logic devices, etc., are constituted by a very large number of elements,and a part of the circuit or of the memory cells are often inoperativedue to various cause in their fabrication processes. In this case, whensemiconductor devices partially defective circuits or memory cells aregenerally regarded as defective devices, the semiconductor devices havelow fabrication yields, which might lead to fabrication cost increase.In view of this, recently such defective semiconductor devices havedefective circuits or defective memory cells replaced by redundantcircuits or redundant memory cells which have been prepared in advance,to create properly functioning devices. In some semiconductor devices, aplurality of circuits having functions different from each other areformed integrated and later those of certain functions are replaced, andin other semiconductor devices prescribed circuits are formed, and latercharacteristics of the semiconductor devices are adjusted. In suchreconstruction of semiconductor devices, usually a fuse circuit having aplurality of fuses is formed on the semiconductor devices, and afteroperation tests, etc., the fuses are disconnected by laser beamirradiation.

A conventional semiconductor device including a fuse circuit and amethod for fabricating the same will be explained with reference toFIGS. 25A-25C. FIG. 25A is a diagrammatic sectional view of theconventional semiconductor device, which shows a structure thereof. FIG.25B is a plan view of the conventional semiconductor device, which showsthe structure thereof. FIG. 25C is a diagrammatic sectional view of theconventional semiconductor device with a fuse disconnected, which showsthe structure thereof.

A fuse 202 is formed on a substrate 200, connected to a prescribedcircuit for replacing the circuit. An inter-layer insulation film 204for covering the fuse 202 is formed thereon. An interconnection layer206 is formed on the inter-layer insulation film 204, connected to thefuse 202 therethrough. A plurality of the fuses 202 are formed on thesubstrate 200 at a prescribed pitch (FIGS. 25A and 25B). Furthermore,there is formed a passivation film 211 which covers the interconnectionlayer 206 and is thinner partially on the fuses 202.

To disconnect the fuse 202 in such fuse circuit, a laser beam 208 isirradiated to a region where the fuse is formed, whereby the fuse 202 israpidly heated by its absorbed energy to a high temperature andundergoes laser explosion (FIG. 25C).

Here to further micronize the semiconductor device, it is necessary tofurther decrease a pitch between the fuses 202, but a pitch P of thefuses 202 is determined by a spot size 210 of the laser beam 208 andalignment accuracy of the laser beam 208.

A spot size of the laser beam 208 has a lower limit which is determinedby a wavelength of the laser beam 208, and the spot size 208 can bedecreased as the laser beam has a shorter wavelength. However, when awavelength of the laser beam is too short, there is a risk that thelaser beam may pass through a region where the fuse 202 is not formed,arrives at the base semiconductor substrate and is absorbed therein, andcause thermal laser explosion. In a case that the semiconductorsubstrate is silicon, the laser beam has an about 1 μm wavelength, atwhich silicon substrates absorb small amounts of laser beams. That is, alower limit is about 1.5-2.0 μm in spot size.

On the other hand, alignment accuracy is required for the prevention ofa disadvantage that the base silicon substrate is damaged if the laserexplosion regions overlap each other in blowing both fuses 202 adjacentto each other and also for the prevention of a disadvantage that indisconnecting one of fuses 202 adjacent to each other, the other isdamaged or blown. Usually a lower limit of the alignment accuracy isabout 0.5 μm.

Thus, a lower limit of the fuse pitch of the above-describedconventional fuse disconnecting method is about 2.0-2.5 μm.

As a method for narrowing a pitch P of the fuses, a method using aphotoresist is known.

In the method using a photoresist, a photoresist 212 is formed in a stepbefore the step of forming a passivation film 211 of the semiconductordevice shown in FIG. 25A (FIG. 26A), a laser beam 208 whose power is lowenough not to cause laser explosion is irradiated to expose thephotoresist 212 (FIG. 26B), the exposed photoresist 212 is developed toremove the photoresist 212 in the exposed region 214 (FIG. 26C), a fuse202 is removed by the usual etching process with the photoresist 212 asa mask (FIG. 26D), and the fuse 202 is disconnected with the photoresist212 as a mask (FIG. 26D).

According to this method, the laser beam 208 may have a power which issufficient only to expose the photoresist 212, and it is not necessarythat the power is high enough to laser explode the fuse 202 or thesemiconductor substrate. Accordingly, the laser beam 208 can easily havea shorter wavelength and can have a spot size 210 which is decreased inaccordance with a wavelength of the laser beam 208. Accordingly, a fusepitch P, which is determined by a spot size 210 of the laser beam can bedecreased.

However, the method using a photoresist must additionally include aphotoresist application step and a photoresist development step, a fuseetching step and a photoresist releasing step. Conventionally, it hascaused no trouble that the test process following completion of thewafer process has lower cleanliness in comparison with that in the waferprocess clean room, but in a case that a process, such as etching,formation of a passivation film or others, is performed after the test,it is necessary to perform the test process in a clean room of highcleanliness so that dust on wafers does not pollute the etching system,or an etching system which is exclusively used for the fusedisconnection is installed, which leads to higher fabrication costsrather than simple increase of fabrication steps.

As described above, in the conventional fuse disconnecting method, it isdifficult to narrow a fuse pitch corresponding to increased integrationof a semiconductor device while depressing increase of fabrication stepsand fabrication costs.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a structure of asemiconductor device including a fuse circuit which is easily higherintegrated and does not add to fabrication cost and a method forfabricating the same.

The present invention provides a semiconductor device and a method forfabricating the same for disconnecting a fuse by laser ablation. Laserablation is a phenomena that a laser beam of high intensity isirradiated to an object-to-be-irradiated to disconnect bonds ofsubstances by energy of the irradiated laser beam and instantaneouslysublimate the object-to-be-irradiated.

The conventional fuse disconnecting method using laser explosion due toabsorption of a laser beam converts optical energy to vibrations ofstretches, etc. of bonds of substances, i.e., to thermal energy forlaser explosion, while laser ablation dissociates bonds of substancesdirectly by optical energy, and is based on the phenomena which is quitedifferent from laser explosion.

Due to such mechanism difference, in the laser ablation, a part a laserbeam irradiated to vanishes with a boundary with respect to a part thelaser beam has not been irradiated to remain in a beautiful facet. Onthe other hand, in the conventional laser explosion, the laser explosiontakes place up to the vicinity of a part a laser beam is irradiated to,generating a number of particles and blurring the boundary between thelaser beam irradiated part and a non-laser beam irradiated part. Thecutting edge formed by the laser ablation is different from that formedby the laser explosion, so that the fuse disconnecting method can bedistinguished by observing the cutting edge of the fuses.

The laser ablation can thus beautifully remove a laser beam irradiatedpart but has a disadvantage that substantially all material isinstantaneously removed without good controllability, with a result thatnot only a fuse but also a part of the semiconductor substratetherebelow are removed.

In view of this, the inventors of the present invention made earneststudies and found a material which is difficult to be sublimated bylaser ablation. The inventors of the present invention are the first tohave made it clear that a blocking layer of the material which isdifficult to be sublimated by laser ablation is provided below the fusesto thereby stop the laser ablation on the blocking layer with goodcontrollability. That is, the blocking layer is formed of, e.g.,tungsten (W) film, whereby the laser ablation can be stopped with goodcontrollability.

Even in disconnecting fuses by the laser ablation, if the laser ablationcan be controlled by the blocking layer, there is no risk that even withlaser beams of short wavelengths, semiconductor substrates will not bedamaged, as they are damaged by the conventional laser explosion.Accordingly a laser beam can have a small spot size corresponding to awavelength of the laser beam.

In disconnecting two fuses adjacent to each other, even when both laserspots overlap each other, the blocking layer which is sufficiently thickcan keep semiconductor substrates from damage. That is, a fuse pitch canbe made smaller in accordance with decrease of a wavelength of the laserbeam.

The laser ablation requires only a laser system to disconnect fuses andrequires no additional etching system, etc., and increases neitherfabrication steps and fabrication costs.

A method for disconnecting the fuses by the laser ablation is detailedin Japanese Patent Application No. 10-151309/1998 which an inventor ofthe present application is joined as a co-inventor.

That is, the above-described object is achieved by a semiconductordevice comprising: a blocking layer formed on a substrate; and aplurality of fuses formed above the blocking layer through an insulationfilm, wherein irradiation regions of laser beams for disconnecting thefuses provided for the respective plural fuses are arranged withstaggered arrangement. This structure of the semiconductor device canprohibit irradiation regions of laser beams from overlapping each other,whereby the fuses can be arranged without making a fuse pitch larger.Accordingly, the fuse region can be smaller.

The above-described object is also achieved by a semiconductor devicecomprising: a blocking layer formed on a substrate; and a plurality offuses formed above the blocking layer through an insulation film,wherein the blocking layer is divided in portions corresponding torespective regions respectively containing at least one irradiationregion of a laser beam for disconnecting the fuse. This structure of thesemiconductor device can prevent leak current from flowing to the fusesthrough the blocking layer, whereby disadvantages that leak currentflows into one fuses from a plurality of fuses, and a disadvantage ofincreased power consumption.

The above-described object is also achieved by a semiconductor devicecomprising: a blocking layer formed on a substrate; and a plurality offuses formed above the blocking layer through an insulation film,wherein the blocking layer in a region where irradiation regions oflaser beams for disconnecting the fuses overlap each other has a largerthickness than that of the blocking layer in the rest region. Thisstructure of the semiconductor device prohibits twice or more laserablation to a fuse from arriving at the substrate, whereby a small fusepitch can be used without considering overlap of laser spots. Adimension in a direction of extension of the fuses can be also small,which permits the semiconductor device to be further micronized.

The above-described object is achieved by a semiconductor devicecomprising: a first insulation film formed on a substrate and having acontact hole which reaches the substrate formed in; an interconnectionlayer formed on the first insulation film and connected to the substratethrough the contact hole; a blocking layer formed on the firstinsulation film and formed of the same conducting layer as theinterconnection layer; a second insulation film formed on the firstinsulation film with the blocking layer and the interconnection layerformed on; and fuses formed on the second insulation film in a regionwhere the blocking layer is formed. This structure of the semiconductordevice makes it possible that the blocking layer for restraining thelaser ablation to be formed without complicating the conventionalsemiconductor device fabrication steps.

The above-described object is also achieved by a semiconductor devicecomprising: a first insulation film formed on a substrate and having acontact hole which reaches the substrate formed in; a plug buried in thecontact hole and connected to the substrate; a blocking layer formed onthe first insulation film and formed of the same conducting layer as theplug; a second insulation film formed on the first insulation film withthe plug and the blocking layer formed on; and fuses formed on thesecond insulation film in a region where the blocking layer formed. Thisstructure of the semiconductor device makes it possible that theblocking layer for restraining the laser ablation to be formed withoutcomplicating the conventional semiconductor device fabrication steps.

In the above-described semiconductor device, it is preferable that thefirst insulation film further has an opening formed in at least a regionwhere irradiation regions of laser beams for disconnecting the fusesoverlap each other, and the blocking layer is buried in the opening.This structure of the semiconductor device makes it possible to make afuse pitch smaller without complicating the semiconductor devicefabrication steps and without considering overlap of laser spots.

In the above-described semiconductor device, it is preferable that theblocking layer includes a tungsten layer. The tungsten layer is suitablefor restraining the laser ablation.

The above-described object is also achieved by a semiconductor devicecomprising: a first insulation film formed on a substrate and having afirst contact hole formed in a first region and a first opening formedin a second region; a first plug buried in the first contact hole; afirst blocking layer buried in the first opening and formed of the sameconducting layer as the first plug; a second insulation film formed onthe first insulation film and having a second contact hole formed in athird region and a second opening formed in the second region; a secondplug buried in the second contact hole; a second blocking layer buriedin the second opening and formed of the same conducting layer as thesecond plug; a third insulation film formed on the second insulationfilm with the second plug and the second blocking layer; and a fuseformed on the second region on the third insulation film. This structureof the semiconductor device makes it possible that the blocking layerfor restraining the laser ablation to be formed without complicating theconventional semiconductor device fabrication steps.

In the above-described semiconductor device, it is preferable that thesecond blocking layer is formed in a region where at least the firstblocking layer is not formed, and the first blocking layer and thesecond blocking layer form an uninterrupted blocking region as viewed ina plan layout. This structure of the semiconductor device makes itpossible that the blocking layer having a thickness corresponding to athickness of the insulation film can be formed without complicating thesemiconductor device fabrication steps.

The above-described object is also achieved by a semiconductor devicecomprising a memory cell region with a plurality of memory cells formedin, and a fuse circuit region with a fuse circuit for switching adefective memory cell to a redundant memory cell formed in, thesemiconductor device comprising: a blocking layer formed in the fusecircuit region and formed of the same conducting layer as a firstinterconnection layer formed in the memory cell region; an insulationfilm formed on the blocking layer; a fuse formed on the insulation filmin the fuse circuit region and formed of the same conducting layer as aconducting layer forming the memory cells or a second interconnectionlayer formed in the memory cell region. Thus the blocking layer isformed of the same conducting layer as the interconnection layer used inthe memory cell region, and the fuses are formed of the same conductinglayer as the conducting layer forming the memory cells or theinterconnection layer formed in the memory cell region, whereby the DRAMincluding the fuses which can be disconnected by laser ablation can befabricated without complicating the conventional semiconductor devicefabrication steps.

The above-described object is also achieved by a semiconductor devicecomprising a memory cell region with a plurality of memory cells formedin, and a fuse circuit region with a fuse circuit for switching adefective memory cell to a redundant memory cell formed in, thesemiconductor device comprising: a blocking layer formed in the fusecircuit region and formed of a first conducting layer formed in thememory cell region; an insulation film formed on the blocking layer; anda fuse formed on the insulation film in the fuse circuit region andformed of a same conducting layer as a second conducting layer formingthe memory cells or a third conducting layer forming an interconnectionlayer formed in the memory cell region. Thus, the blocking layer isformed of the same conducting layer as the conducting layer used in thememory cell region, and the fuses are formed of the same conductinglayer as the conducting layer forming the memory cells or theinterconnection layer formed in the memory cell region, whereby the DRAMincluding the fuses which can be disconnected by laser ablation can befabricated without complicating the conventional semiconductor devicefabrication steps.

The above-described object is also achieved by a method for fabricatingthe semiconductor device comprising the steps of: forming on a substratea first insulation film having a contact hole which reaches thesubstrate formed in; depositing a first conducting film on the firstinsulation film and patterning the same to form a first interconnectionlayer connected to the substrate through the contact hole and formed ofthe first conducting film, and a blocking layer formed of the firstconducting film; forming a second insulation film on the firstinsulation film with the first interconnection layer and the blockinglayer formed on; and depositing a second conducting film on the secondinsulation film and patterning the same to form a second interconnectionlayer formed of the second conducting film, and fuses formed above theblocking layer and formed of the second conducting film. Thisfabrication steps of the semiconductor device permits the firstinterconnection layer and the blocking layer to be formed of the sameconducting layer, whereby the fuse circuit which can be disconnected bylaser ablation without complicating the conventional semiconductordevice fabrication steps.

In the above-described method for fabricating the semiconductor device,it is preferable that in the step of forming the first insulation film,an opening which reaches the substrate is further formed in the firstinsulation film in a region where irradiation regions of laser beams fordisconnecting the fuses overlap each other, and in the step of formingthe first interconnection layer and the blocking layer, the blockinglayer is formed, buried in the opening and extended over the firstinsulation film. In forming the contact hole, an opening is in advanceformed in a region where irradiation regions of laser beams fordisconnecting fuses overlap each other, whereby the blocking layer inthe region where irradiation regions of laser beams overlap each othercan be thick. The fuses can be arranged without considering overlap oflaser spots.

The above-described object is also achieved by a method for fabricatingthe semiconductor device comprising the steps of: forming on a substratea first insulation film having a contact hole which reaches thesubstrate formed in; forming a plug buried in the contact hole andformed of a first conducting film, and a blocking layer on the firstinsulation film and formed of the first conducting film; forming asecond insulation film on the first insulation film with the plug andthe blocking layer formed on; and depositing a second conducting film onthe second insulation film and patterning the same to form aninterconnection layer formed of the second conducting film, and a fuseformed above the blocking layer and formed of the second conductingfilm. This fabrication steps of the semiconductor device permits theplug and the blocking layer to be formed of the same conducting layer,whereby the fuse circuit which can be disconnected by laser ablation canbe fabricated without complicating the conventional semiconductor devicefabrication steps.

In the above-described method for fabricating the semiconductor device,it is preferable that in the step of forming the plug and the blockinglayer, the first conducting film is formed on the first insulation film,a photoresist is formed on the first conducting film in a region wherethe blocking layer is to be formed, and the first conducting film isetched back with the photoresist as a mask, whereby the plug buried inthe contact hole, and the blocking layer formed on the first insulationfilm are formed. This fabrication steps of the semiconductor devicemakes it possible that the blocking layer is formed by adding the stepof once lithography to the conventional semiconductor device fabricationsteps.

In the above-described method for fabricating the semiconductor device,it is preferable that in the step of forming the first insulation film,an opening which reaches the substrate is further formed in the firstinsulation film in a region where the blocking layer is to be formed,and in the step of forming the plug and the blocking layer, the firstconducting film is formed on the fist insulation film, and the firstconducting film is etched back, whereby the plug buried in the contacthole, and the blocking layer buried in the opening are formed. Thisfabrication steps of the semiconductor device makes it possible that theblocking layer having a thickness corresponding to a thickness of thefirst insulation film can be formed without complicating theconventional semiconductor device fabrication steps.

In the above-described method for fabricating the semiconductor device,it is preferable that the method further comprises the step of:disconnecting the fuse by a laser ablation.

In the above-described method for fabricating the semiconductor device,it is preferable that in the step of forming the blocking layer, theblocking layer including a tungsten layer is formed.

The above-described object is also achieved by a method for fabricatingthe semiconductor device comprising the steps of: forming on a substratea first insulation film having a first contact hole formed in a firstregion, and a first opening formed in a second region formed in;depositing a first conducting film on the first insulation film andetching back the same to form a first plug buried in the first contacthole and formed of the first conducting film, and a first blocking layerburied in the first opening and formed of the first conducting film;forming on the first insulation film with the first plug and the firstblocking layer formed on a second insulation film having a secondcontact hole formed in a third region and a second opening formed in thesecond region; depositing a second conducting film on the secondinsulation film and etching back the same to form a second plug buriedin the second contact hole and formed of the second conducting film, anda second blocking layer buried in the second opening and formed of thesecond conducting film; forming a third insulation film on the secondinsulation film having the second plug and the second blocking layerformed on; and forming a fuse on the third insulation film in the secondregion. This fabrication steps of the semiconductor device makes itpossible that the first blocking layer and the second blocking layerform a thick blocking layer can be formed without complicating theconventional semiconductor device fabrication steps.

In the above-described method for fabricating the semiconductor device,it is preferable that the second blocking layer is formed in a regionwhere at least the first blocking layer is not formed to constitute bythe first blocking layer and the second blocking layer an uninterruptedblocking region as viewed in a plan layout.

In the above-described method for fabricating the semiconductor device,it is preferable that the method further comprises the step of:disconnecting the fuse by a laser ablation.

In the above-described method for fabricating the semiconductor device,it is preferable that in the step of forming the first conducting film,the first conducting film including a tungsten layer is formed, and inthe step of forming the second conducting film, the second conductingfilm including a tungsten layer is formed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic sectional view of the semiconductor deviceaccording to a first embodiment of the present invention, which shows astructure thereof.

FIG. 2 is a diagrammatic sectional view of the semiconductor deviceaccording a first modification of the first embodiment, which shows astructure thereof.

FIG. 3 is a diagrammatic sectional view of the semiconductor deviceaccording to a second modification of the first embodiment, which showsa structure thereof.

FIG. 4A is a plan view of the semiconductor device according to a secondembodiment of the present invention, which show a structure thereof.

FIG. 4B is a diagrammatic sectional view of the semiconductor deviceaccording to the second embodiment of the present invention, which showa structure thereof.

FIG. 5 is a view explaining a problem occurring in disconnecting a fuseafter a cover film has been formed.

FIG. 6A is a plan view of the semiconductor device according to a thirdembodiment of the present invention, which show a structure thereof.

FIG. 6B is a diagrammatic sectional view of the semiconductor deviceaccording to the third embodiment of the present invention, which show astructure thereof.

FIG. 7 is a plan view of the semiconductor device according to a fourthembodiment of the present invention, which shows a structure thereof.

FIG. 8 is a diagrammatic sectional view of the semiconductor deviceaccording to the fourth embodiment of the present invention, which showsthe structure thereof.

FIGS. 9A-9C and 10A-10B are sectional views of the semiconductor deviceaccording to the fourth embodiment of the present invention in the stepsof the method for fabricating the same, which show the method.

FIG. 11 is a plan view of the semiconductor device according to a fifthembodiment of the present invention, which shows a structure thereof.

FIG. 12 is a diagrammatic sectional view of the semiconductor deviceaccording to the fifth embodiment of the present invention, which showsthe structure thereof.

FIGS. 13A-13C and 14A-14B are sectional views of the semiconductordevice according to the fifth embodiment of the present invention in thesteps of the method for fabricating the same, which show the method.

FIG. 15 is a diagrammatic sectional view of the semiconductor deviceaccording to a sixth embodiment of the present invention, which showsthe structure thereof.

FIGS. 16A-16C and 17A-17C are sectional views of the semiconductordevice according to the sixth embodiment of the present invention in thesteps of the method for fabricating the same, which show the method.

FIG. 18 is a diagrammatic sectional view of the semiconductor deviceaccording to a seventh embodiment of the present invention, which showsthe structure thereof.

FIGS. 19A-19B are sectional views of the semiconductor device accordingto the seventh embodiment of the present invention in the steps of themethod for fabricating the same, which show the method.

FIG. 20 is a sectional view of the semiconductor device according to amodification of the seventh embodiment of the present invention, whichshows the structure and the method.

FIG. 21A is a plan view of the semiconductor device according to aneighth embodiment of the present invention, which shows the structurethereof.

FIG. 21B is a diagrammatic sectional view of the semiconductor deviceaccording to the eighth embodiment of the present invention, which showsthe structure thereof.

FIGS. 22A-22C and 23A-23B are sectional views of the semiconductordevice according to the eighth embodiment of the present invention inthe steps of the method for fabricating the same, which show the method.

FIGS. 24A and 24B are plan views of the semiconductor device accordingto modifications of the eight embodiment, which shows a structurethereof.

FIGS. 25A-25C are diagrammatic views of a conventional semiconductordevice, which show a structure thereof and a method for fabricating thesame.

FIGS. 26A-26D are diagrammatic views of a conventional semiconductordevice, which show a structure thereof and a method for fabricating thesame.

DETAILED DESCRIPTION OF THE INVENTION

[A First Embodiment]

The semiconductor device according to a first embodiment of the presentinvention will be explained with reference to FIG. 1.

FIG. 1 is a diagrammatic sectional view of the semiconductor deviceaccording to the present embodiment, which shows a structure thereof.

In the present embodiment, one example of realizing a DRAM including afuse circuit which can be disconnected by laser ablation, withoutcomplicating the conventional DRAM fabrication steps will be explained.The DRAM uses the fuse circuit for switching an address circuit fordesignating a memory cell, so that a required fuse of the fuse circuitis disconnected to switch an address of a defective memory cell to aredundant memory cell. The DRAM is so arranged that even when a part ofthe memory cells is defective, the memory cell is switched to aredundant memory cell to thereby prevent the device as a whole frombecoming defective.

On a silicon substrate 10, there are defined a memory cell region 12 inwhich a plurality of memory cells are formed, a peripheral circuitregion 14 in which a peripheral circuits for driving the memory cellsare formed, and a fuse circuit region 16 for switching a defectivememory cell to a redundant memory cell.

On the silicon substrate 10, a device isolation film 18 is formed fordefining a device region. On the silicon substrate 10 in the memory cellregion 12, a transfer transistor including a gate electrode 20, andsource/drain diffused layers 22, 24 are formed. A bit line 26 isconnected to the source/drain diffused layer 22. A fin-shaped storageelectrode 28 is connected to the source/drain diffused layer 24. Thestorage electrode 28 is covered with an opposed electrode 30 through adielectric film (not shown). The storage electrode 28, the dielectricfilm and the opposed electrode 30 constitute a capacitor. Thus, in thememory cell region 12, a plurality of the memory cells constituted bythe transfer transistors and the capacitors are formed. A structure ofthe memory cell shown in FIG. 1 is detailed in, e.g., Japanese PatentPublication No. 28476/1996 filed by the applicant of the presentapplication.

In the peripheral circuit region 14, there are formed a plurality ofperipheral transistors (not shown) constituting peripheral circuits. Aninter-layer insulation film 32 is formed on the silicon substrate 10with the memory cells and the peripheral transistors formed on. On theinter-layer insulation film 32 there are formed a strapping word line34, an interconnection layer 36 interconnecting the peripheraltransistors to constitute peripheral circuits, and a blocking layer 38for restraining laser ablation, which are formed of the same conductinglayer including tungsten (W) film. An inter-layer insulation film 40 isformed on the inter-layer insulation film 32 with the strapping wordline 34, the interconnection layer 36 and the blocking layer 38 formedon. On the inter-layer insulation film 40, there are formed aninterconnection layer 42 and a fuse 44 formed of the same Al alloylayer. A cover film 46 is formed on the inter-layer insulation film 40with the interconnection layer 42 and the fuse 44 formed on.

As described above, the semiconductor device according to the presentembodiment is characterized in that the blocking layer 38 and the fuse44 are formed of the same conducting layer forming the otherinterconnection layers. That is, the fuse 44 of the fuse circuit isformed of the same conducting layer forming the second metalinterconnection layer (the interconnection layer 42) included in theDRAM, and the blocking layer 38 is formed of the same conducting layerforming the first metal interconnection layer (the strapping word line34 and the interconnection layer 36) including tungsten film. Thisconstitution of the semiconductor device allows the blocking layer 38and the fuse 44 to be formed simultaneously with the otherinterconnection layers, whereby the fuse circuit, which can bedisconnected by laser ablation with good controllability can befabricated without complicating the conventional fabrication steps.

In the present embodiment, the interconnection layer forming the fuses44 is the second metal interconnection layer but is not essentially thesecond metal interconnection layer. That is, in the laser ablation, thetarget is sublimated sequentially from the top layer, so that the fusescan be formed of any of the interconnection layers. It is not essentialthat the interconnection layer forming the fuses 44 is the uppermostinterconnection layer. Even in a case that three or more metalinterconnection layers are included, the fuses 44 may be formed of anyof the metal interconnection layers. However, decreasing the films onthe fuses allows a total power of the laser ablation to be decreased,and furthermore, merits of increased throughputs and laser ablationcontrol with higher accuracy. Thus, it is preferable that the fuses isformed of an uppermost conducting layer.

The blocking layer 38 of a material which is not easily sublimated bylaser ablation is positioned below the fuse 44, whereby the fuse 44 maybe formed of a metal interconnection layer or another conducting layer.

Recently, in consideration of a requirement of lower resistance of gateelectrodes, metal gate structures, poly/metal gate structures of astacked film of polycrystalline silicon film and refractory metal film,etc. are studied. In some cases that such gate structures are used, thegate electrode 20 includes tungsten film. Thus, as exemplified in FIG.2, the blocking layer 38 can be formed of the same conducting layer asthe gate electrode 20.

As exemplified in FIG. 3, it is possible that the fuse 44 is formed ofthe same conducting layer as the opposed electrode 30, and the blockinglayer 38 is formed below the fuse 44. The blocking layer 38 may beformed of a film additionally inserted. The blocking layer 38 may bealso formed of a conducting layer positioned below the fuse 44, e.g.,the same conducting layer as the storage electrode 28, the bit line 26,or the word line 20.

Similarly, the fuse 44 may be formed of the same conducting layer as thestorage electrode 28 or the bit line 26.

In the present embodiment, the fuse circuit of the DRAM having thefin-shaped capacitor is used. However, the DRAM having the fin-shapedcapacitor is not essential, and DRAMs of various structures may be used.In addition to the DRAMs, SRAMs, other memory devices, and logic devicesmay be used.

[A Second Embodiment]

The semiconductor device according to a second embodiment of the presentinvention will be explained with reference to FIGS. 4A and 4B.

FIG. 4A is a plan view of the semiconductor device according to thepresent embodiment, which show a structure thereof. FIG. 4B is asectional view of the semiconductor device according to the presentembodiment, which show a structure thereof.

As described above, in the fuse disconnecting method using laserablation, even when both two fuses adjacent to each other aredisconnected, there is no risk that even overlapped laser beam spots maydamage the semiconductor substrate when the blocking layer has asufficient thickness. However, when alignment with a device structure isconsidered as in the semiconductor device according to, e.g., the firstembodiment, it will be often difficult that the blocking layer has alarge film thickness. In such case, when adjacent fuses are disconnectedby overlapped laser beam spots, there is a risk that the laser ablationmay pass through the blocking layer down to the lower insulation filmand, in a worst case, may reach and damage the semiconductor substrate.

The semiconductor device according to the present embodiment has astructure which can stop laser ablation without making the blockinglayer thicker.

The structure of the semiconductor device according to the presentembodiment will be explained with reference to FIGS. 4A and 4B. FIG. 4Ais a diagrammatic sectional view of the semiconductor device accordingto the present embodiment, which shows the structure, and FIG. 4B is aplan view of the semiconductor device, which shows the structure.

A blocking layer 52 for restraining laser ablation is formed on asubstrate 50. The blocking layer 52 has a film thickness sufficient tobear at least once laser ablation. A plurality of fuses 56 are formedthrough an inter-layer insulation film 54 on the substrate with theblocking layer 52 formed on. The fuses 56 have a pitch which, when oneof the fuses 56 is disconnected, prevents a spot region of a laser beamfrom overlapping the other fuses 56.

The semiconductor device according to the present embodiment ischaracterized in that a spot region 58 of each fuse 56 for a laser beamto be irradiated to is staggered with respect to a spot region 58 of itsadjacent fuse 56. The so-called staggered arrangement of the spotregions 58 prevents the spot regions 58 of adjacent ones of the fuses56, where the fuses 56 are to be disconnected, from overlapping eachother. Resultantly the blocking layer 52 is not exposed to twice laserablation.

Accordingly, the blocking layer 52 may have a film thickness sufficientto bear once laser ablation and the blocking layer 52 may not beunnecessarily thick. A fuse pitch may be determined only inconsideration of a laser spot for disconnecting one fuse 56, and even ina case that the blocking layer 52 is thin, a larger pitch is notnecessary.

As described above, according to the present embodiment, a laser beamspot region 58 where each fuse 56 is disconnected is staggered withrespect to that of its adjacent one, whereby even in case that theblocking layer 52 is thin, the fuses 56 can be laid out without making afuse pitch larger.

In the semiconductor device shown in FIGS. 4A and 4B, the fusedisconnecting regions are staggered with respect to each other in tworows in the longitudinal direction of the fuses 56 but may be staggeredwith each other in three or more rows.

[A Third Embodiment]

The semiconductor device according to a third embodiment of the presentinvention will be explained with reference to FIGS. 5 and 6A-6B. Thesame members of the present embodiment as those of the semiconductordevice according to the second embodiment are represented by the samereference numbers not to repeat or to simplify their explanation.

FIG. 5 is a view explaining a problem of disconnecting a fuse after acover film has been formed. FIG. 6A is a plan view of the semiconductordevice according to the present embodiment, which show a structurethereof. FIG. 6B is a sectional view of the semiconductor deviceaccording to the present embodiment, which show a structure thereof.

The fuse disconnecting method using laser ablation can disconnect a fusewithout influence of a film, such as thick cover film or polyimide film,formed on the fuses, which allows a semiconductor device fabricationmethod to be much simplified.

However, in the semiconductor device exemplified in FIG. 5, whichincludes a blocking layer 52, an inter-layer insulation film 54, a fuse56 and a cover film 57 formed on a substrate 50, when the fuse 56 isdisconnected on the cover film 57, the fuse 56 and the blocking layer 52are exposed in a disconnecting hole 59 formed to disconnect the fuse 56.Unless a passivation film (not shown) covering the sectional surface ofthe fuse 56 is formed, water attaches to the inside wall of thedisconnecting hole 59, and there is a risk that leak current may flowbetween the fuse 56 and the blocking layer 52 through the inside wallsurface (see FIG. 5). In a worst case, leak current flows between alldisconnected fuses 56 and the blocking layer 52, and a risk thatcurrents may flow from a number of fuses to a specific one isconsidered. The respective leak currents are very low, but when leakcurrents flow from a number of fuses, these leak currents much affect astandby current and lead to increased electric power consumption of thedevice.

The semiconductor device according to the present embodiment has astructure which can prevent current leak from the fuses through theblocking layer.

The semiconductor device according to the present embodiment ischaracterized in that the blocking layer 52 is arranged interrupted inrespective fuse disconnecting regions. That is, as shown in FIG. 6A, theblocking layer 52 is disposed insulated from each other below respectivestaggered spot regions 58. The blocking layer 52 is thus divided,whereby a current which flows between each fuse 56 and its associatedblocking layer 52 does not flow to the other fuse 56. The leak currentcan be much decreased.

As described above, according to the present embodiment, the blockinglayer 52 is disposed for the respective fuse disconnecting regions,whereby flow of leak currents among the fuses 56 through the blockinglayer 52 can be prevented. Accordingly electric power consumption can bedecreased.

In the present embodiment, the blocking layer 52 is disposed interruptedoptimumly for the respective spot regions 58, but the blocking layer 52is not essentially interrupted for the respective spot regions. That is,in the sense that leak currents are prohibited from flowing collectivelyto a specific fuse in a large amount, the blocking layer 52 is disposedinterrupted for respective 2 or 3 spot regions 58 in a small numberwhich can prohibit collection of leak currents into a large amount,whereby the effect can be expected. A number of spot regions 58 for onepart of the blocking layer 52 can be selected suitably for an expectedleak current, etc.

The present embodiment is applied to the semiconductor device accordingto the second embodiment, in which the spot regions 58 are staggeredarrangement but is applicable to semiconductor devices having the spotregions 58 laid in any arrangement.

The leak current between the fuses and the blocking layer can beprevented also by, as described in the specification of Japanese PatentApplication No. 151309/1998, disconnecting fuses before forming thecover film.

[A Fourth Embodiment]

The semiconductor device and the method for fabricating the sameaccording to a fourth embodiment of the present invention will beexplained with reference to FIGS. 7, 8, 9A-9C and 10A-10B.

FIG. 7 is a plan view of the semiconductor device according to thepresent embodiment, which shows a structure thereof. FIG. 8 is adiagrammatic sectional view of the semiconductor device according to thepresent embodiment, which shows the structure thereof. FIGS. 9A-9C and10A-10B are sectional views of the semiconductor device according to thepresent embodiment in the steps of the method for fabricating the same,which shows the method.

First, the structure of the semiconductor device according to thepresent embodiment will be explained with reference to FIGS. 7 and 8.FIG. 8 is the sectional view along the line X-X′ in FIG. 7.

A device isolation film 62 for defining a device region is formed on asilicon substrate 60. In the device region defined by the deviceisolation film 62, a MOS transistor constituted by a gate electrode 68formed on the silicon substrate 60 through a gate insulation film 66,and a source/drain diffused layers 64 formed on both sides of the gateelectrode 68. On the device isolation film in a fuse forming region, aconducting layer 70 which functions as an etching stopper film isformed. An inter-layer insulation film 72 is formed on the siliconsubstrate 60 with the MOS transistor, etc. thus formed on, and throughthe inter-layer insulation film 72, there are formed a contact hole 74which reaches the source/drain diffused layer 64, and grooves 76 whichreach the conducting layer 70 in the fuse forming region. On theinter-layer insulation film 72, there are formed an interconnectionlayer 78 connected to the source/drain diffused layer 64 through thecontact hole 74, and a blocking layer 80 formed of the same conductinglayer as the interconnection layer 78 and extended over the inter-layerinsulation film 72 buried in the grooves 76. An inter-layer insulationfilm 82 with a contact hole 84 arriving at the interconnection layer 78formed in is formed on the inter-layer insulation film 72 with theinterconnection layer 78 and the blocking layer 80 formed on. On theinter-layer insulation film 82, there are formed an interconnectionlayer 86 connected to the interconnection layer 78 through the contacthole 84, and fuses 88 formed of the same conducting layer as theinterconnection layer 86 and formed above the blocking layer 80.

The semiconductor device according to the present embodiment ischaracterized in that the grooves 76 are formed in the inter-layerinsulation film 72 in regions where spot regions 90 of laser beams fordisconnecting the fuses 88 overlap each other, and the blocking layer 80in the regions are made thicker. This structure of the semiconductordevice can prevents laser ablation from advancing through the blockinglayer 80 even when adjacent fuses 88 are disconnected, whereby the fusepitch can be smaller without arranging the fuse disconnecting regionswith staggered arrangement as in the second embodiment.

Next, the characteristic of the semiconductor device according to thepresent embodiment and the method for fabricating the same will bedetailed in accordance with the steps of the method for fabricating thesemiconductor device.

First, the device isolation film 62 is formed on a silicon substrate 60by, e.g., the usual LOCOS method.

Then, a MOS transistor constituted by the source/drain diffused layers64 and the gate electrode 68 is formed in the same way as a usual MOStransistor fabrication method (FIG. 9A). At this time, the conductinglayer 70 of the same layer as the gate electrode 68 is left in the fuseforming region.

The conducting layer 70 is to be used as an etching stopper film informing the grooves 76 in the inter-layer insulation film 72. Theconducting layer 70 is not essential, and is not necessary in a casethat the grooves 76 can be etched with good controllability withoutaffecting the ground. The conducting layer 70 is not essentially formedof the same conducting layer as the gate electrode 68, and, in, e.g., aDRAM, can be formed of the same conducting layer of a capacitor opposedelectrode, such as polycrystalline silicon film or others. Theconducting layer 70 may be another film as long as the film can be theetching stopper for the inter-layer insulation film 72.

Subsequently, the inter-layer insulation film 72 of silicon oxide filmis formed on the entire surface by, e.g., CVD method.

Then, the contact hole 74 which reaches the source/drain diffused layer64, and the grooves 76 which reach the conducting layer 70 are formed inthe inter-layer insulation film 72 by the usual lithography and etching.(FIG. 9B).

Then, a tungsten film is deposited on the entire surface by, e.g., CVDmethod. At this time, it is preferable that the tungsten film has athickness which can bear at least once laser ablation and which issufficient to fill the grooves 76 and the contact hole 74.

For better adhesion and lower contact resistance of the tungsten filmwith respect to the silicon substrate 10, it is usual to provide anadhesion layer/contact layer of, e.g., TiN film/Ti film below thetungsten film. This structure is applicable to the method forfabricating the semiconductor device according to the presentembodiment. Other films, such as an anti-reflection film, etc. may beformed on the tungsten film.

Then, the thus-formed tungsten film is patterned to form theinterconnection layer 78 connected to the source/drain diffused layer64, and the blocking layer 80 extended over the inter-layer insulationfilm 72 buried in the grooves 76 (FIG. 9C).

Then, the inter-layer insulation film 82 of silicon oxide film is formedby, e.g., CVD method on the inter-layer insulation film 72 with theinterconnection layer 78 and the blocking layer 80 formed on.

Then, the contact hole 84 which reaches the interconnection layer 78 isformed in the inter-layer insulation film 82 by the usual lithographyand etching (FIG. 10A).

Then, a conducting layer including an aluminum alloy layer is formed onthe entire surface by, e.g., sputtering method and patterned to form theinterconnection layer 86 connected to the interconnection layer 78through the contact hole 84, and the fuses 88 formed above the blockinglayer 80 (FIG. 10B).

The semiconductor device is thus fabricated, whereby the blocking layercan be thicker in the spot regions where spots of laser beams fordisconnecting the fuses 88 overlap each other, which allows a fuse pitchto be determined without considering an overlap of the spot regions.

As described above, according to the present embodiment, the grooves 76are formed in the inter-layer insulation film 72 in the regions wherethe spot regions 90 of laser beams for disconnecting the fuses 88overlap each other, and the blocking layer 80 is formed, filling thegrooves 76 and extended over the inter-layer insulation film 72, wherebythe blocking layer 80 can be thicker in the regions where the spotregions 90 of laser beams overlap each other. The blocking layer 80 andthe interconnection layer 78 are common with each other, and the grooves76 are formed simultaneously with opening of the contact hole 78, whichdoes not complicate the conventional semiconductor device fabricationmethod.

[A Fifth Embodiment]

The semiconductor device according to a fifth embodiment of the presentinvention and the method for fabricating the same will be explained withreference to FIGS. 11, 12, 13A-13C and 14A-14B. The same members of thepresent embodiment as those of the semiconductor device according to thefourth embodiment are represented by the same reference numbers not torepeat or to simplify their explanation.

FIG. 11 is a plan view of the semiconductor device according to thepresent embodiment, which shows a structure thereof. FIG. 12 is adiagrammatic sectional view of the semiconductor device according to thepresent embodiment, which shows the structure thereof. FIGS. 13A-13C and14A-14B are sectional views of the semiconductor device according to thepresent embodiment in the steps of the method for fabricating the same,which explain the method.

First, the structure of the semiconductor device according to thepresent embodiment will be explained with reference to FIGS. 11 and 12.

The semiconductor device according to the present embodiment ischaracterized in that a blocking layer for restraining laser ablation isformed of a thick film buried in an inter-layer insulation film 72. Thatis, in the inter-layer insulation film 72, there are formed a contacthole 74 which reaches a source/drain diffused layer 64, and an opening92 which reaches a conducting layer 70, and an interconnection layer 78connected to the source/drain diffused layer 64 through the contact hole74, and the blocking layer 80 buried in the opening 92 and extended overthe inter-layer insulation film 72 are formed on the inter-layerinsulation film 72.

The thus-formed blocking layer 80 has a height corresponding to a filmthickness of the inter-layer insulation film 72, and even in a case thatspot regions of laser beams for disconnecting fuses 88 overlap eachother, the laser ablation is prevented from arriving at the substrate.Accordingly, this structure of the semiconductor device prevents laserablation from passing through the blocking layer 80 even when adjacentfuses 88 are disconnected, which allows a small fuse pitch withoutarranging the fuse disconnecting regions with staggered arrangement asin the second embodiment.

Then, the characteristic of the semiconductor device according to thepresent embodiment and the method for fabricating the same will bedetailed in accordance with the steps of the semiconductor devicefabrication method.

First, in the same way as in the semiconductor device according to,e.g., the fourth embodiment shown in FIGS. 9A and 9B, the inter-layerinsulation film 72 is formed on the silicon substrate 60 with the MOStransistor, etc. formed on.

Then, the contact hole 74 which reaches the source/drain diffused layer64 and the opening 92 which reaches the conducting layer 70 are formedin the inter-layer insulation film 72 by the usual lithography andetching (FIG. 13A). The opening 92 is a region where the blocking layer80 for restraining laser ablation is to be formed. The opening 92 isformed on a region where at least spot regions 90 of laser beams overlapeach other.

Then, a tungsten film 94 is deposited on the entire surface by, e.g.,CVD method (FIG. 13B). It is preferable that the tungsten film 94 has athickness sufficient to fully fill the opening 92. In the semiconductordevice shown in FIG. 13B, for planarization, the tungsten film 94 isdeposited so as to have a substantially flat surface, but may have athickness which is sufficient at least to bury the contact hole 74 andto be extended as the interconnection layer over the inter-layerinsulation film 72 and is sufficient to restrain laser ablation.

It is possible that an adhesion layer/contact layer of, e.g., a TiNfilm/Ti film is provided below the tungsten film.

Then, the surface of thus-deposited tungsten film 94 is etched back orpolished, whereby the tungsten film 94 on the inter-layer insulationfilm 72 has a thickness suitable as the interconnection layer (FIG.13C).

Next, the tungsten film 94 is patterned to form the interconnectionlayer 78 connected to the source/drain diffused layer 64 through thecontact hole 74, and the blocking layer 80 extended over the inter-layerinsulation film 72 buried in the opening 92 (FIG. 14A).

Subsequently, in the same way as in the semiconductor device accordingto, e.g., the fourth embodiment shown in FIGS. 10A and 10B, the fuses88, the interconnection layer 86, etc. are formed (FIG. 14B).

The semiconductor device is thus fabricated, whereby the blocking layer80 can be thick without much changing fabrication steps of theconventional semiconductor device. Accordingly, even in a case that spotregions 90 of laser beams for disconnecting the fuses 88 overlap eachother, the blocking layer 80 can bear the laser ablation.

As described above, according to the present embodiment, the tungstenfilm to be the blocking layer 80 is buried in the opening 92 formed inthe inter-layer insulation film 72 in the fuse forming region, wherebythe blocking layer 80 can be thick without much changing the fabricationsteps of the conventional semiconductor device. As a result, even in acase that spot regions 90 of laser beams for disconnecting the fuses 88overlap each other, the blocking layer 80 can bear the laser ablation.

In the present embodiment, the blocking layer 80 is formed of the firstmetal interconnection layer, but the blocking layer may be formed of theinterconnection layer which is more above.

It is not essential that the blocking layer is uninterrupted all overthe fuse forming region and may be divided as the blocking layer of thethird embodiment.

[A Sixth Embodiment]

The semiconductor device according to a sixth embodiment of the presentinvention and the method for fabricating the same will be explained withreference to FIGS. 15, 16A-16C and 17A-17C. The same members of thepresent embodiment as the semiconductor device according to the fourthor the fifth embodiments are represented by the same reference numbersnot to repeat or to simplify their explanation.

FIG. 15 is a diagrammatic sectional view of the semiconductor deviceaccording to the present embodiment, which shows a structure thereof.FIGS. 16A-16C and 17A-17C are sectional views of the semiconductordevice in the steps of the method for fabricating the same, which showthe method.

First, the structure of the semiconductor device according to thepresent embodiment will be explained with reference to FIG. 15.

A device isolation film 62 for defining a device region is formed on asilicon substrate 60. In the device region defined by the deviceisolation film 62, there is formed a MOS transistor constituted by agate electrode 68 formed on the silicon substrate 60 through a gateinsulation film 66 and a source/drain diffused layers 64 formed on bothsides of the gate electrode 68. On the silicon substrate 60 with the MOStransistor, etc. formed on, there is formed an inter-layer insulationfilm 72 with a contact hole 74 which reaches the source/drain diffusedlayer 64 of the MOS transistor. A plug 96 is buried in the contact hole74. On the inter-layer insulation film 72 in a fuse forming region,there are formed a blocking layer 80 of the same conducting layer as theplug 96, and an interconnection layer 78 connected to the plug 96. Onthe inter-layer insulation film 72 with the interconnection layer 78 andthe blocking layer 80 formed on, there is formed an inter-layerinsulation film 82 with a contact hole 84 formed in which reaches theinterconnection layer 78. A plug 98 is buried in the contact hole 84. Onthe inter-layer insulation film 82, there are formed an interconnectionlayer 86 connected to the interconnection layer 78 through the plug 98,and fuses 88 of the same conducting layer as the interconnection layer86 formed above the blocking layer 80.

The semiconductor device according to the present embodiment ischaracterized in that the plug 96 and the blocking layer 80 are formedof the same conducting layer. Recently in the semiconductor device, itis common that multi-layer metal interconnection layers of aluminumalloy layers are inter-connected with each other by a tungsten plug. Ifthe blocking layer and the plug are formed of a common tungsten film,the plug layer can be formed without making changes to interconnectingmaterials and interconnecting structures. The present embodiment hastaken this into consideration.

Next, the characteristic of the semiconductor device according to thepresent embodiment and the method for fabricating the same will beexplained in accordance with the steps of the fabrication method.

First, in the same way as in the semiconductor device according to,e.g., the fourth embodiment shown in FIGS. 9A and 9B, an inter-layerinsulation film 72 is formed on a silicon substrate 60 with the MOStransistor, etc. formed on.

Then the contact hole 74 which reaches the source/drain diffused layer64 is formed in the inter-layer insulation film 72 by the usuallithography and etching (FIG. 16A).

Subsequently a tungsten film 94 is formed on the entire surface by CVDmethod. The tungsten film 94 is deposited in a thickness which is morethan a half a diameter of an opening of the contact hole 74, whereby thecontact hole 74 is filled with the tungsten film 94. A contact layer of,e.g., a TiN film/Ti film may be provided below the tungsten film 94.

Then, a photoresist 100 is formed by the usual lithography in a regionwhere the blocking layer 80 is to be formed (FIG. 16B). In thesemiconductor device shown in FIG. 16B, the photoresist 100 is formed toform the blocking layer 80 in one uninterrupted body but may be formedto form the blocking layer 80 divided for respective fuses as in thethird embodiment.

Next, the tungsten film 94 is etched back to form the plug 96 buried inthe contact hole in the same way as the usual tungsten plug formingmethod. At this time, the photoresist 100 functions as a mask for theetching, and =accordingly the tungsten film 94 remain as in the regionwhere the photoresist 100 is formed. The blocking layer 80 of thetungsten film 94 is formed concurrently with the plug 96 (FIG. 16C).

Subsequently, after the photoresist 100 is removed, a conducting layercontaining, e.g., an aluminum alloy layer is deposited on theinter-layer insulation film 72 with the plug 96 and the blocking layer80 formed on and patterned to form the interconnection layer 78connected to the silicon substrate 60 through the plug 96 (FIG. 17A).

Then, the inter-layer insulation film 82 is formed on the inter-layerinsulation film 72 with the interconnection layer 78 and the blockinglayer 80 formed on.

Next, the contact hole 84 which reaches the interconnection layer 78 isformed in the inter-layer insulation film 82.

Subsequently, a tungsten film, for example, is deposited on the entiresurface and etched back to form the plug 98 buried in the contact hole84 (FIG. 17B).

Then, a conducting layer containing, e.g., an aluminum alloy layer isdeposited on the inter-layer insulation film 82 with the plug 98 buriedin and patterned to form the interconnection layer 86 connected to theinterconnection layer 78 through the plug 98, and the fuses 88 formedabove the blocking layer 80 (FIG. 17C).

Thus, a fuse circuit including the fuses 88 of the conducting layercontaining the aluminum alloy layer, and the blocking layer 80 of thetungsten film can be formed.

As described above, according to the present embodiment, the addition ofonly one step that is the lithography step of forming the photoresistfor leaving the blocking layer 80 enables the blocking layer to bereadily formed, whereby the fuses 88 which are disconnectable by laserablation can be formed without much changing a structure of theconventional device and a method for fabricating the same.

[A Seventh Embodiment]

The semiconductor device according to a seventh embodiment and themethod for fabricating the same will be explained with reference toFIGS. 18 and 19A-19B. The same members of the present embodiment asthose of the semiconductor device according to the fourth to the sixthembodiments are represented by the same reference numbers not to repeator to simplify their explanation.

FIG. 18 is a diagrammatic sectional view of the semiconductor deviceaccording to the present embodiment, which shows the structure. FIGS.19A-19B are sectional views of the semiconductor device in the steps ofthe method for fabricating the same, which show the method.

Then, the structure of the semiconductor device according to the presentembodiment will be explained with reference to FIG. 18.

The semiconductor device according to the present embodiment ischaracterized in that a blocking layer 80 for restraining laser ablationis formed on the same conducting layer as a plug 96 buried in aninter-layer insulation film 72. The thus-formed blocking layer 80 has aheight corresponding to a film thickness of the inter-layer insulationfilm 72, and even in a case that spot regions 90 of laser beams fordisconnecting fuses 88 overlap each other, laser ablation can beprohibited from reaching the substrate. The semiconductor device hassuch structure, whereby even in a case fuses 88 adjacent to each otherare disconnected, the laser ablation does not pass through the blockinglayer 80. Accordingly, a small fuse pitch can be used without arrangingthe fuse disconnecting regions with staggered arrangement as in thesecond embodiment.

Next, the characteristic of the semiconductor device and the method forfabricating the same according to the present embodiment will beexplained in accordance with the steps of the method for fabricating thesame.

First, in the same way as in the method for fabricating thesemiconductor device according to, e.g., the fifth embodiment the thicktungsten film 94 for burying the opening 92 and the contact hole 74 isformed. In the semiconductor device according to the present embodiment,the spot regions 90 of laser beams are positioned in the opening 92.

Then, in the same way as in the usual tungsten plug forming step, thetungsten film 94 is etched back or polished to form the blocking layer80 buried in the opening 92, and the plug 96 buried in the contact hole74 (FIG. 19A).

Subsequently, in the same way as in the method for fabricating thesemiconductor device according to, e.g., the sixth embodiment shown inFIGS. 17B and 17C, the interconnection layer 78 connected to the plug96, the inter-layer insulation film 82, the plug 98, the interconnectionlayer 86, the fuses 88, etc. are formed (FIG. 19B).

The semiconductor device is thus fabricated, whereby the blocking layer80 can be thick without much changing the conventional semiconductordevice fabrication steps. As a result, even in a case that the spotregions 90 of laser beams for disconnecting the fuses overlap eachother, the blocking layer 80 can bear the laser ablation.

In the present embodiment, the interconnection layer 78 on the plug 96is formed of an aluminum alloy layer but may be formed of a tungstenfilm. In the latter case, as shown in FIG. 20, it is possible that atungsten film 102 of the same conducting layer as the interconnectionlayer 78 can be left also on the blocking layer 80. In this case, thetungsten film 102 also functions as the blocking layer, and the opening92 in the inter-layer insulation film 72 may be formed at least only ina region where the spot regions 90 of laser beams overlap each other.

[An Eighth Embodiment]

The semiconductor device and the method for fabricating the sameaccording to an eighth embodiment of the present invention will beexplained with reference to FIGS. 21A-21B, 22A-22C and 23A-23B. The samemembers of the present embodiment as those of the semiconductor deviceaccording to the fourth to the seventh embodiments are represented bythe same reference numbers not to repeat or to simplify theirexplanation.

FIG. 21A shows a plan view of the semiconductor device according to thepresent embodiment, which show a structure thereof. FIG. 21B shows asectional view of the semiconductor device according to the presentembodiment, which show a structure thereof. FIGS. 22A-22C and 23A-23Bare sectional views of the semiconductor device according to the presentembodiment in the steps of the method for fabricating the same, whichshow the method.

First, the structure of the semiconductor device according to thepresent embodiment will be explained with reference to FIGS. 21A and21B.

The semiconductor device according to the present embodiment ischaracterized in that a blocking layer for restraining laser ablation isformed of a striped blocking layer buried in one inter-layer insulationfilm, and a striped blocking layer buried in another inter-layerinsulation film.

That is, on a silicon substrate 60 with a MOS transistor, etc. formedon, there is formed an inter-layer insulation film 72 in which areformed a contact hole 74 which reaches a source/drain diffused layers 64of the MOS transistor, and striped grooves 76 which reach a conductinglayer 70. A plug 96 of tungsten film is buried in the contact hole 74.The tungsten film of the same conducting layer as the plug 96 is buriedin the striped grooves 76 to form a striped blocking layer 104. On theinter-layer insulation film 72 with the plug 96 and the blocking layer104 buried in, there is formed an interconnection layer 78 connected tothe plug 96. On the inter-layer insulation film 72 with theinterconnection layer 78 formed on, there are formed a contact hole 84which reaches the interconnection layer 78, and striped grooves 106which reach regions between each of the divided portions of the blockinglayer 104 and its adjacent portion. A plug 98 of tungsten film is buriedin the contact hole 84, and the tungsten film of the same conductinglayer as the plug 98 is buried in the grooves 106, and a stripedblocking layer 108 is formed. The blocking layer 104 and the blockinglayer 108 are uninterrupted as viewed in a plan layout (FIG. 21A). Onthe inter-layer insulation film 84, there are formed an interconnectionlayer 110 connected to the interconnection layer 78 through the plug 98.An inter-layer insulation film 112 is formed on the inter-layerinsulation film 82 with the interconnection layer 110 formed on. On theinter-layer insulation film 112, there are formed an interconnectionlayer 86, and fuses 88 formed of the same conducting layer as theinterconnection layer 86 and formed above the blocking layers 104, 108.

The thus-formed blocking layers 104, 108 have sufficient heightscorresponding to film thicknesses of the inter-layer insulation films72, 82, and accordingly even in a case that spots of laser beams fordisconnecting the fuses 88 overlap each other, the laser ablation isprevented from arriving at the substrate. This structure of thesemiconductor device does not permit, even when those of the fuses 88adjacent to each other are disconnected, the laser ablation to passthrough the blocking layers 104, 108. Accordingly, it is not necessaryto arrange the fuse disconnecting regions with staggered arrangement asin the second embodiment, and a small fuse pitch can be used.

Next, the characteristic of the semiconductor device and the method forfabricating the same according to the present embodiment will bedetailed in accordance with the steps of the semiconductor devicefabrication method.

First, in the same way as in the method for fabricating thesemiconductor device according to, e.g., the fourth embodiment shown inFIG. 9C, a MOS transistor, etc. are formed on a silicon substrate 60.

Next, the inter-layer insulation film 72 of silicon oxide film is formedon the entire surface by, e.g., CVD method.

Subsequently, the contact hole 74 which reaches a source/drain diffusedlayer 64 and striped grooves 76 which reach the conducting layer 70 areformed in the inter-layer insulation film 72 (FIG. 22A). A width of thegrooves 76 is made substantially equal to a diameter of the contact hole74, whereby a tungsten film is deposited in a film thickness which isnecessary to form the plug 96 in a later step, and thereby the tungstenfilm can be fully filled also in the grooves 76. The semiconductordevice can be fabricated without much changing fabrication conditions ofthe conventional semiconductor device.

Then, a tungsten film is deposited on the entire surface by, e.g., CVDmethod. A contact layer of, e.g., TiN film/Ti film may be provided belowthe tungsten film.

Then, the thus-deposited tungsten film is etched back to remain thetungsten film only in the contact hole 74 and the grooves 76. The plug96 thus buried in the contact hole 74, and the blocking layer 104 buriedin the striped grooves 76 are formed (FIG. 22C).

Subsequently, the conducting layer containing an aluminum alloy layer onthe entire surface by, e.g., sputtering method and patterned to form theinterconnection layer 78 connected to the source/drain diffused layer 64through the plug 96.

Then, the inter-layer insulation film 82 of silicon oxide film is formedby, e.g., CVD method on the inter-layer insulation film 72 with theinterconnection layer 78 formed on.

Next, the contact hole 84 which arrives at the interconnection layer 78,the striped grooves 106 which expose the inter-layer insulation film 72in regions between each portion of the divided blocking layer 104 andits adjacent portion are formed in the inter-layer insulation film 82(FIG. 22C). A width of the grooves 106 is made substantially equal to adiameter of the contact hole 84, whereby the tungsten film is depositedin a film thickness necessary to form the plug 98 in the later step, andthereby the tungsten film can be fully filled in the grooves 106. Thesemiconductor device can be fabricated without changing fabricationconditions of the conventional semiconductor device. Preferably thegrooves 106 are formed to expose the edges of the portions of theblocking layer 104.

Subsequently, a tungsten film is deposited on the entire surface by,e.g., CVD method. A contact layer of, e.g., a TiN film/Ti film may beprovided below the tungsten film.

Then, the thus-deposited tungsten film is etched back to leave thetungsten film only in the contact hole 84 and the grooves 106. Thus, theplug 98 buried in the contact hole 84 and the blocking layer 108 buriedin the striped grooves 106 are formed (FIG. 23A).

The blocking layers 104, 108 are thus formed, whereby the blockinglayers 104, 108 are uninterrupted as viewed in a plan layout (see FIG.21A), whereby the blocking layer 104 and/or the blocking layer 108 canrestrain the laser ablation.

Next, the conducting layer containing an aluminum alloy layer is formedon the entire surface by, e.g., sputtering method and patterned to formthe interconnection layer 110 connected to the interconnection layer 78through the plug 98.

Subsequently, the inter-layer insulation film 112 of silicon oxide filmis formed by, e.g., CVD method on the inter-layer insulation film 82with the interconnection layer 110 formed on.

Then, the interconnection layer containing an aluminum alloy layer isformed on the entire surface by, e.g., sputtering method and patternedto form the interconnection layer 86, and the fuses 88 formed above theblocking layers 104, 108.

The semiconductor device is thus fabricated, whereby the blocking layerswhich can bear the laser ablation even in a case that spots of laserbeams for disconnecting the fuses overlap each other can be formedwithout changing the conventional semiconductor device fabricationmethod.

As described above, according to the present embodiment, the two stripedblocking layers 104, 108 which are formed concurrently with the plugs96, 98 are arranged in an uninterrupted blocking layer as viewed in aplan layout, whereby the blocking layers which can bear, even in a casethat spots of laser beams for disconnecting the fuses overlap eachother, the laser ablation can be formed.

In the present embodiment, the blocking layers 104, 108 are striped, butthey are not essentially striped. As exemplified in FIG. 24A, twomesh-like blocking layers 104 a, 108 a may be arranged in anuninterrupted blocking layer as viewed in a plan layout. As exemplifiedin FIG. 24B, two mesh-like blocking layers 104 b, 108 b may be arrangedin an uninterrupted blocking layer as viewed in a plan layout. Theblocking layers 104, 108 may have any patterns as long as the patternscan be filled simultaneously with filling the plugs 96, 98.

In a semiconductor device including plugs of three or more layers, theblocking layers may be formed of any two layers of the three or morelayers, and the plugs of the three or more layers are arranged in anuninterrupted blocking layer as viewed in a plan layout.

The blocking layers are not formed necessarily continuous over the fuseforming regions and may be formed in the arrangement of the thirdembodiment.

1. A method for fabricating a semiconductor device comprising the stepsof: forming on a substrate a first insulation film having a contact holewhich reaches the substrate; depositing a first conducting film on thefirst insulation film and patterning the same to form a firstinterconnection layer connected to the substrate through the contacthole and formed of the first conducting film, and a blocking layerformed of the first conducting film; forming a second insulation film onthe first insulation film with the first interconnection layer and theblocking layer formed on the first insulation film; and depositing asecond conducting film on the second insulation film and patterning thesame to form a second interconnection layer formed of the secondconducting film, and a fuse formed above the blocking layer and formedof the second conducting film.
 2. A method for fabricating thesemiconductor device according to claim 1, wherein in the step offorming the first insulation film, an opening which reaches thesubstrate is further formed in the first insulation film in a regionwhere irradiation regions of laser beams for disconnecting the fusesoverlap each other, and in the step of forming the first interconnectionlayer and the blocking layer, the blocking layer is formed, buried inthe opening and extended over the first insulation film.
 3. A method forfabricating the semiconductor device comprising the steps of: forming ona substrate a first insulation film having a contact hole which reachesthe substrate formed in; forming a plug buried in the contact hole andformed of a first conducting film, and a blocking layer on the firstinsulation film and formed of the first conducting film; forming asecond insulation film on the first insulation film with the plug andthe blocking layer formed on; and depositing a second conducting film onthe second insulation film and patterning the same to form aninterconnection layer formed of the second conducting film, and a fuseformed above the blocking layer and formed of the second conductingfilm.
 4. A method for fabricating the semiconductor device according toclaim 3, wherein in the step of forming the plug and the blocking layer,the first conducting film is formed on the first insulation film, aphotoresist is formed on the first conducting film in a region where theblocking layer is to be formed, and the first conducting film is etchedback with the photoresist as a mask, whereby the plug buried in thecontact hole, and the blocking layer formed on the first insulation filmare formed.
 5. A method for fabricating the semiconductor deviceaccording to claim 3, wherein in the step of forming the firstinsulation film, an opening which reaches the substrate is furtherformed in the first insulation film in a region where the blocking layeris to be formed, and in the step of forming the plug and the blockinglayer, the first conducting film is formed on the fist insulation film,and the first conducting film is etched back, whereby the plug buried inthe contact hole, and the blocking layer buried in the opening areformed.
 6. A method for fabricating the semiconductor device accordingto claim 1, further comprising the step of: disconnecting the fuse by alaser ablation.
 7. A method for fabricating the semiconductor deviceaccording to claim 6, wherein in the step of forming the blocking layer,the blocking layer including a tungsten layer is formed.
 8. A method forfabricating the semiconductor device according to claim 3, furthercomprising the step of: disconnecting the fuse by a laser ablation.
 9. Amethod for fabricating the semiconductor device according to claim 8,wherein in the step of forming the blocking layer, the blocking layerincluding a tungsten layer is formed.
 10. A method for fabricating thesemiconductor device comprising the steps of: forming on a substrate afirst insulation film having a first contact hole formed in a firstregion, and a first opening formed in a second region formed in;depositing a first conducting film on the first insulation film andetching back the same to form a first plug buried in the first contacthole and formed of the first conducting film, and a first blocking layerburied in the first opening and formed of the first conducting film;forming on the first insulation film with the first plug and the firstblocking layer formed on a second insulation film having a secondcontact hole formed in a third region and a second opening formed in thesecond region; depositing a second conducting film on the secondinsulation film and etching back the same to form a second plug buriedin the second contact hole and formed of the second conducting film, anda second blocking layer buried in the second opening and formed of thesecond conducting film; forming a third insulation film on the secondinsulation film with the second plug and the second blocking layerformed on; and forming a fuse on the third insulation film in the secondregion.
 11. A method for fabricating the semiconductor device accordingto claim 10, wherein the second blocking layer is formed in a regionwhere at least the first blocking layer is not formed to constitute bythe first blocking layer and the second blocking layer an uninterruptedblocking region as viewed in a plan layout.
 12. A method for fabricatingthe semiconductor device according to claim 10, further comprising thestep of: disconnecting the fuse by a laser ablation.
 13. A method forfabricating the semiconductor device according to claim 12, wherein inthe step of forming the first conducting film, the first conducting filmincluding a tungsten layer is formed, and in the step of forming thesecond conducting film, the second conducting film including a tungstenlayer is formed.
 14. A method for fabricating a semiconductor devicecomprising the steps of: forming a first insulation film over asubstrate; forming a metal plug over the first insulation film, themetal plug being a blocking layer for protecting an underlying structurethereof; and forming a fuse over the metal plug.
 15. A method forfabricating the semiconductor device according to claim 14, wherein thestep of forming the metal plug including the steps of: forming a secondinsulation film on the first insulation film; forming a via-hole in thesecond insulation film; and filling the metal plug in the via-hole. 16.A method for fabricating the semiconductor device according to claim 14,further comprising the step of disconnecting the fuse by a laserablation.
 17. A method for fabricating the semiconductor deviceaccording to claim 16, wherein in the step of forming the metal plug,the metal plug including a tungsten layer is formed.